irg4pc40ud insulated gate bipolar transistor with ultrafast soft recovery diode features features features features features e g n-channel c v ces = 600v v ce(on) typ. = 1.72v @v ge = 15v, i c = 20a parameter min. typ. max. units r q jc junction-to-case - igbt ------ ------ 0.77 r q jc junction-to-case - diode ------ ------ 1.7 c/w r q cs case-to-sink, flat, greased surface ------ 0.24 ------ r q ja junction-to-ambient, typical socket mount ----- ----- 40 wt weight ------ 6 (0.21) ------ g (oz) thermal resistance ultrafast copack igbt 4/17/97 absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 40 i c @ t c = 100c continuous collector current 20 i cm pulsed collector current ? 160 a i lm clamped inductive load current ? 160 i f @ t c = 100c diode continuous forward current 15 i fm diode maximum forward current 160 v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 160 p d @ t c = 100c maximum power dissipation 65 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw. 10 lbf?in (1.1 n?m) ? ultrafast: optimized for high operating frequencies 8-40 khz in hard switching, >200 khz in resonant mode ? generation 4 igbt design provides tighter parameter distribution and higher efficiency than generation 3 ? igbt co-packaged with hexfred tm ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations ? industry standard to-247ac package benefits ? generation -4 igbt's offer highest efficiencies available ? igbt's optimized for specific application conditions ? hexfred diodes optimized for performance with igbt's . minimized recovery characteristics require less/no snubbing ? designed to be a "drop-in" replacement for equivalent industry-standard generation 3 ir igbt's pd 9.1467d w to-247ac
irg4pc40ud parameter min. typ. max. units conditions q g total gate charge (turn-on) ---- 100 150 i c = 20a qge gate - emitter charge (turn-on) ---- 16 25 nc v cc = 400v see fig. 8 q gc gate - collector charge (turn-on) ---- 40 60 v ge = 15v t d(on) turn-on delay time ---- 54 ---- t j = 25c t r rise time ---- 57 ---- ns i c = 20a, v cc = 480v t d(off) turn-off delay time ---- 110 165 v ge = 15v, r g = 10 w t f fall time ---- 80 120 energy losses include "tail" and e on turn-on switching loss ---- 0.71 ---- diode reverse recovery. e off turn-off switching loss ---- 0.35 ---- mj see fig. 9, 10, 11, 18 e ts total switching loss ---- 1.10 1.5 t d(on) turn-on delay time ---- 40 ---- t j = 150c, see fig. 9, 10, 11, 18 t r rise time ---- 52 ---- ns i c = 20a, v cc = 480v t d(off) turn-off delay time ---- 200 ---- v ge = 15v, r g = 10 w t f fall time ---- 130 ---- energy losses include "tail" and e ts total switching loss ---- 1.6 ---- mj diode reverse recovery. l e internal emitter inductance ---- 13 ---- nh measured 5mm from package c ies input capacitance ---- 2100 ---- v ge = 0v c oes output capacitance ---- 140 ---- pf v cc = 30v see fig. 7 c res reverse transfer capacitance ---- 34 ---- ? = 1.0mhz t rr diode reverse recovery time ---- 42 60 ns t j = 25c see fig. ---- 74 120 t j = 125c 14 i f = 15a i rr diode peak reverse recovery current ---- 4.0 6.0 a t j = 25c see fig. ---- 6.5 10 t j = 125c 15 v r = 200v q rr diode reverse recovery charge ---- 80 180 nc t j = 25c see fig. ---- 220 600 t j = 125c 16 di/dt 200a/s di (rec)m /dt diode peak rate of fall of recovery ---- 190 ---- a/s t j = 25c during t b ---- 160 ---- t j = 125c parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage ? 600 ---- ---- v v ge = 0v, i c = 250a d v (br)ces / d t j temperature coeff. of breakdown voltage ---- 0.63 ---- v/c v ge = 0v, i c = 1.0ma v ce(on) collector-to-emitter saturation voltage ---- 1.72 2.1 i c = 20a v ge = 15v ---- 2.15 ---- v i c = 40a see fig. 2, 5 ---- 1.7 ---- i c = 20a, t j = 150c v ge(th) gate threshold voltage 3.0 ---- 6.0 v ce = v ge , i c = 250a d v ge(th) / d t j temperature coeff. of threshold voltage ---- -13 ---- mv/c v ce = v ge , i c = 250a g fe forward transconductance ? 11 18 ---- s v ce = 100v, i c = 20a i ces zero gate voltage collector current ---- ---- 250 a v ge = 0v, v ce = 600v ---- ---- 3500 v ge = 0v, v ce = 600v, t j = 150c v fm diode forward voltage drop ---- 1.3 1.7 v i c = 15a see fig. 13 ---- 1.2 1.6 i c = 15a, t j = 150c i ges gate-to-emitter leakage current ---- ---- 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) electrical characteristics @ t j = 25c (unless otherwise specified)
irg4pc40ud fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics 1 10 100 1000 4681012 c i , collector-to-emitter current (a) ge t = 25c t = 150c j j v , gate-to-emitter volta g e (v) a v = 10v 5s pulse width cc 1 10 100 1000 0.1 1 10 ce c i , collector-to-emitter current (a) v , collector-to-emitter volta g e (v) t = 150c t = 25c j j v = 15v 20s pulse width ge a 0 10 20 30 0.1 1 10 100 f, frequency (khz) load current (a) a 60% of rated voltage duty cycle: 50% t = 125c t = 90c gate drive as specified turn-on losses include effects of reverse recovery sink j power dissipation = 35w
irg4pc40ud fig. 5 - collector-to-emitter voltage vs. junction temperature fig. 4 - maximum collector current vs. case temperature fig. 6 - maximum igbt effective transient thermal impedance, junction-to-case 1.0 1.5 2.0 2.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 ce v , collector-to-emitter voltage (v) v = 15v 80s pulse width ge a i = 40a i = 20a i = 10a t , junction temperature (c) j c c c 0 10 20 30 40 25 50 75 100 125 150 maximum dc collector current (a) t , case temperature (c) c v = 15v ge a 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , rectangular pulse duration (sec) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 sin gle p ulse (thermal response) thermal response (z ) p t 2 1 t dm n otes: 1. d uty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c
irg4pc40ud fig. 7 - typical capacitance vs. collector-to-emitter voltage fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. junction temperature 0 1000 2000 3000 4000 1 10 100 ce c, capacitance (pf) v , collector-to-emitter volta g e (v) a v = 0v, f = 1m hz c = c + c , c s ho rted c = c c = c + c ge ies ge gc ce res gc oes ce gc c ies c res c oes 0 4 8 12 16 20 0 20 40 60 80 100 120 ge v , gate-to-emitter voltage (v) g q , total gate charge (nc) a v = 400v i = 20a ce c 1.0 1.2 1.4 1.6 1.8 0 102030405060 g total switching losses (mj) r , gate resistance ( w ) a v = 480v v = 15v t = 25c i = 20a cc ge c c 0.1 1 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 total switching losses (mj) r = 10 w v = 15v v = 480v a i = 40a i = 20a i = 10a g ge cc c c c t , junction temperature (c) j
irg4pc40ud fig. 11 - typical switching losses vs. collector-to-emitter current fig. 12 - turn-off soa fig. 13 - maximum forward voltage drop vs. instantaneous forward current 1 10 100 0.8 1.2 1.6 2.0 2.4 fm f instantaneous forward current - i (a) forward volta g e drop - v ( v ) t = 150c t = 125c t = 25c j j j 1 10 100 1000 1 10 100 1000 c ce ge v , collector-to-emitter voltage (v) i , c ollector-to-e m itter current (a ) safe operating area v = 20v t = 125c ge j 0.0 1.0 2.0 3.0 4.0 5.0 0 1020304050 c total switching losses (mj) r = 10 w t = 150c v = 480v v = 15v g c cc ge i , collector-to-emitter current (a) a
irg4pc40ud fig. 14 - typical reverse recovery vs. di f /dt fig. 15 - typical recovery current vs. di f /dt fig. 16 - typical stored charge vs. di f /dt fig. 17 - typical di (rec)m /dt vs. di f /dt 1 10 100 100 1000 f di /dt - ( a/ s ) i - (a) irrm i = 5.0a i = 15a i = 30a f f f v = 200v t = 125c t = 25c r j j 0 200 400 600 800 100 1000 f di /dt - ( a/ s ) rr q - (nc) i = 30a i = 15a i = 5 .0a f f f v = 200v t = 125c t = 25c r j j 100 1000 100 1000 f di /dt - ( a/ s ) di(rec)m/dt - (a/s) i = 5 .0a i = 15a i = 30a f f f v = 200v t = 125c t = 25c r j j 20 40 60 80 100 100 1000 f di /dt - ( a/ s ) t - (ns) rr i = 30a i = 15a i = 5.0a f f f v = 200v t = 125c t = 25c r j j
irg4pc40ud t1 ic vce t1 t2 90% ic 10% vce td(off) tf ic 5% ic t1+ 5 s vce ic dt 90% vge +vge eoff = fig. 18b - test waveforms for circuit of fig. 18a, defining e off , t d(off) , t f vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +vg 10% +vg 90% ic tr td(on) diode reverse recovery energy tx eon = erec = t4 t3 vd id dt t4 t3 diode recovery w aveforms ic vpk 10% vcc irr 10% irr vcc trr qrr = trr tx id dt same type device as d.u.t. d.u.t. 430f 80% of vce fig. 18a - test circuit for measurement of i lm , e on , e off(diode) , t rr , q rr , i rr , t d(on) , t r , t d(off) , t f fig. 18c - test waveforms for circuit of fig. 18a, defining e on , t d(on) , t r fig. 18d - test waveforms for circuit of fig. 18a, defining e rec , t rr , q rr , i rr
irg4pc40ud vg gate signal device under test current d.u.t. voltage in d.u.t. current in d1 t0 t1 t2 d.u.t. v * c 50v l 1000v 6000f 100v figure 19. clamped inductive load test circuit figure 20. pulsed collector current test circuit r l = 480v 4 x i c @25c 0 - 480v figure 18e. macro waveforms for figure 18a's test circuit
irg4pc40ud dimensions in millimeters and (inches) conforms to jedec outline to-247ac (to-3p) - d - 5.30 (.209) 4.70 (.185) 3.65 (.143) 3.55 (.140) 2.50 (.089) 1.50 (.059) 4 3x 0.80 (.031) 0.40 (.016) 2.60 (.102) 2.20 (.087) 3.40 (.133) 3.00 (.118) 3x 0.25 (.010) m c a s 4.30 (.170) 3.70 (.145) - c - 2x 5.50 (.217) 4.50 (.177) 5.50 (.217) 0.25 (.010) 1.40 (.056) 1.00 (.039) d m m b - a - 15.90 (.626) 15.30 (.602) - b - 1 23 20.30 (.800) 19.70 (.775) 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2x 2x 5.45 (.215) * notes: 1 dimensions & tolerancing per a nsi y14.5m , 1982. 2 controlling dimension : inch. 3 dimensions are show n millimet ers (inch es). 4 con form s to jedec o utline to-247ac. lead assignments 1 - gat e 2 - collecto r 3 - emitt er 4 - collecto r * lo nge r lea ded (20m m ) version available (to-247ad) to order add "-e" suffix to part number case outline ? to-247ac notes: ? repetitive rating: v ge =20v; pulse width limited by maximum junction temperature (figure 20) ? v cc =80%(v ces ), v ge =20v, l=10h, r g = 10 w (figure 19) ? pulse width 80s; duty factor 0.1%. ? pulse width 5.0s, single shot. world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 http://www.irf.com/ data and specifications subject to change without notice. 4/97
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